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Nanoscale Control of Rewriteable Doping Patterns in ...

Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures Jairo Velasco Jr.,†,⊥ Long Ju,† Dillon Wong,† Salman Kahn,† Juwon Lee,† Hsin-Zon …

Controlled boron doping of silicon - AT&T Bell Laboratories

1986-08-05· A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation.

Boron-doping controlled peculiar transport properties of ...

We construct two kinds of p–n junctions based on graphene nanoribbons with different doping concentration. The left part of junction is Boron-doped at the edge of zigzag-edge graphene nanoribbon, and the right part is Boron-doped at the center.

Controlled sp2 Functionalization of Boron Doped …

The development of a voltammetric boron doped diamond (BDD) pH sensor is described. To obtain pH sensitivity, laser micromachining (ablation) is utilized to introduce controlled regions of sp 2 carbon into a high quality polycrystalline BDD electrode.

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by ...

An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source.

(PDF) Atomically controlled substitutional boron-doping …

Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the ...

(PDF) Atomically controlled substitutional boron-doping of ...

Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the ...

Strain-controlled boron and nitrogen doping of …

Nitrogen- and boron-doped amorphous carbon layers (ACLs) were grown by plasma- enhanced chemical vapor deposition (PECVD) on a Si substrate and characterized by Raman and X-ray photoelectron spectroscopy (XPS) techniques.

Controlled nanoscale doping of semiconductors via ...

Figure 3 Boron monolayer doping (p-doping) of Si(100). a, SIMS profile for 5s annealing at 950 and 1,000 C. b, Sheet resistance versus time at different RTA temperatures. c, Sheet resistance versus time for different boron and blank molecular precursor mixing ratios, showing controlled modulation of the B …

Controlled in situ boron doping of diamond thin films ...

Controlled boron doping of diamond film using nontoxic reagents is a challenge in itself. During the present study, attempts have been made to dope diamond films in situ with boron from a solution of boric acid (H3BO3) in methanol (CH3OH) using a specially designed bubbler that ensured continuous and controlled flow of vapors of boron ...

US4604150A - Controlled boron doping of silicon - Google ...

A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration ...

Valence control of alpha-rhombohedral boron by electronic ...

J. Phys.: Condens. Matter 19 (2007) 365241 H Dekura et al which render doping of β boron difficult. The intrinsic defect for β boron has recently been

Controlled in situ boron doping of diamond thin films ...

Controlled boron doping of diamond film using nontoxic reagents is a challenge in itself. During the present study, attempts have been made to dope diamond films in situ with boron from a solution ...

Influence of boron doping on mechanical and tribological ...

The effect of boron doping on lattice parameter, residual stresses, hardness and coefficient of friction in multilayer-diamond coating system was studied. The frictional behaviour of the coat-

Controlled in situ boron doping of short silicon nanowires ...

Epitaxial silicon nanowires (NWs) of short heights (∼280nm) on Si 111 substrate were grown and doped in situ with boron on a concentration range of 1015–1019cm−3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of ...

Self- and dopant diffusion in extrinsic boron doped ...

Abstract. Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers.

Controlled boron doping of silicon - American Telephone ...

1987-06-30· A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation.

Nitrogen and boron doping in carbon nanotubes - Ewels

1 Nitrogen and boron doping in carbon nanotubes Chris Ewels Institute des Materiaux, UMR6502 CNRS-Université de Nantes, 2 rue de la Houssinière, B. P. 32229,

Doping (semiconductor) - Wikipedia

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties.

Chemical Vapor Deposition of a-Boron Layers on Silicon for ...

tual boron doping of the silicon substrate,7,8 the boron concentration at the Si surface can be signif-icantly increased beyond the solid solubility in Si by the appropriate variation of the source gas param- eters and the exposure time. Although, in these earlier studies, a few experiments were performed at approximately 600 C, where a few nanometers-thick B layer was shown to form,4,7 the ...

Laser doping of boron-doped Si paste for high-efficiency ...

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si- wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram ® Si paste/ink) for use as a diffuser in the LD

Atomically controlled substitutional boron-doping of ...

Synthesis of boron-doped graphene nanoribbons. Figure 1a shows the chemical structure of the precursor molecule, in which two pristine anthracene units and one 9,10-dibora-9,10-dihydroanthracene moiety are covalently bonded while two bromine atoms are located at both termini.

Atomically controlled substitutional boron-doping of ...

Abstract Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality.

Atomically controlled substitutional boron-doping of ...

B oron is a unique element in terms of electron deficiency and Lewis acidity, yet it has a comparable size to carbon. Incorporation of boron atoms into an aromatic carbon

Boron - Wikipedia

Boron carbide's ability to absorb neutrons without forming long-lived radionuclides (especially when doped with extra boron-10) makes the material attractive as an absorbent for neutron radiation arising in nuclear power plants. Nuclear applications of boron carbide include shielding, control rods and shut-down pellets. Within control rods, boron carbide is often powdered, to increase its ...

Atomically controlled substitutional boron-doping of ...

2015-08-25· Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development. Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 …

Controlled in situ boron doping of short silicon nanowires ...

Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy Pratyush Das Kanungo,a Nikolai Zakharov, Jan , Otwin Breitenstein, Peter Werner,

Self- and Dopant Diffusion in Extrinsic Boron Doped ...

Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon.